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Ion Implantation: Basics to Device Fabrication by Emanuele Rimini (English) Hard
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- Buy It NowIon Implantation: Basics to Device Fabrication by Emanuele Rimini (English) Hard
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eBay item number:364695728652
Item specifics
- Condition
- ISBN-13
- 9780792395201
- Book Title
- Ion Implantation: Basics to Device Fabrication
- ISBN
- 9780792395201
- Series
- The Springer International Series in Engineering and Computer Science Ser.
- Publication Year
- 1994
- Type
- Textbook
- Format
- Hardcover
- Language
- English
- Publication Name
- Ion Implantation : Basics to Device Fabrication
- Item Length
- 9.3in
- Publisher
- Springer
- Item Width
- 6.1in
- Item Weight
- 58.6 Oz
- Number of Pages
- Xiii, 393 Pages
About this product
Product Information
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Product Identifiers
Publisher
Springer
ISBN-10
0792395204
ISBN-13
9780792395201
eBay Product ID (ePID)
965667
Product Key Features
Publication Name
Ion Implantation : Basics to Device Fabrication
Format
Hardcover
Language
English
Series
The Springer International Series in Engineering and Computer Science Ser.
Publication Year
1994
Type
Textbook
Number of Pages
Xiii, 393 Pages
Dimensions
Item Length
9.3in
Item Width
6.1in
Item Weight
58.6 Oz
Additional Product Features
Series Volume Number
293
Number of Volumes
1 Vol.
Lc Classification Number
Ta418.5-.84
Table of Content
1 Semiconductor Devices.- 1.1 Introduction.- 1.2 Semiconductor Physics.- 1.3 p-n Junction and Diode.- 1.4 Unipolar and Bipolar Transistors.- 1.5 Ion Implantation and Semiconductor Devices.- 1.6 Damage and Yield.- 1.7 Future Trend.- 2 Ion Implanters.- 2.1 Introduction.- 2.2 Ion Sources.- 2.3 High Energy Implanters.- 2.4 Magnetic Analyzer and Beam Transport.- 2.5 Energy Contamination.- 2.6 Scan System and Current Measurement.- 2.7 Wafer Cooling.- 2.8 Wafer Charging.- 2.9 Uniformity Control and Mapping.- 2.10 Contaminants and Yield.- 2.11 Plasma Immersion Ion Implantation.- 3 Range Distribution.- 3.1 Introduction.- 3.2 Elastic Stopping Power.- 3.3 Electronic Energy Loss.- 3.4 Depth Profile of Implanted Ions.- 3.5 Penetration Anomalies.- 3.6 Channeling Implants.- 3.7 Lateral Spreading.- 3.8 Simulation of Range Distribution.- 4 Radiation Damage.- 4.1 Introduction.- 4.2 Collision Cascade.- 4.3 Damage Distribution.- 4.4 Crystalline Defects.- 4.5 Primary Defects.- 4.6 Hot Implants.- 4.7 Ion Beam Induced Enhanced Crystallization.- 4.8 Ion Implantation into Localized Si Areas.- 5 Annealing and Secondary Defects.- 5.1 Introduction.- 5.2 Solid Phase Epitaxial Growth of Amorphous Silicon.- 5.3 Annealing of Low-Dose Heavy - Ion Implant.- 5.4 Regrowth of Amorphous Layer Under a Mask.- 5.5 Annealing of Heavily Disordered Regions.- 5.6 Rapid Thermal Processing.- 5.7 Impurity Diffusion During Annealing.- 5.8 Interaction of Impurities with Ion Implanted Defects.- 5.9 Defect Engineering.- 6 Analytical Techniques.- 6.1 Introduction.- 6.2 Secondary Ion Mass Spectrometry.- 6.3 Spreading Resistance Profilometry: One and Two Dimensional Analyses.- 6.4 Carrier and Mobility Profiles.- 6.5 Rutherford Backscattering and Channeling Effect.- 6.6 Transmission Electron Microscopy.- 7 Silicon Based Devices.- 7.1 Introduction.- 7.2 Threshold Voltage Control in MOSFET.- 7.3 Short Channel Effects.- 7.4 Shallow Junctions.- 7.5 Complementary MOS Devices and Technology.- 7.6 Lifetime Engineering in Power Devices.- 7.7 High Energy Implant Applications.- 7.8 High-Speed Bipolar Transistors.- 8 Ion Implantation in Compound Semi-Conductor and Buried Layer Synthesis.- 8.1 Introduction.- 8.2 Ion Implantation in GaAs.- 8.3 Ion Implantation in InP.- 8.4 Isolation of III-V Semiconductors.- 8.5 Isolation of Superlattice and Quantum Well Structures.- 8.6 Synthesis of Buried Dielectric.- 8.7 Devices in SOI Substrates.- 8.8 Buried Metal Layer Formation.- 8.9 Compound Semiconductor Based Devices.- Selected References.- References.
Copyright Date
1995
Topic
Materials Science / General, Electronics / Semiconductors, Chemistry / Physical & Theoretical, Chemistry / Inorganic, Physics / Nuclear
Lccn
94-034251
Dewey Decimal
621.3815/2
Intended Audience
Scholarly & Professional
Dewey Edition
20
Illustrated
Yes
Genre
Technology & Engineering, Science
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